Interface and Protocol Supports PCIe 4.0 × 4 or PCIe 5.0 × 2, NVMe 2.0 Theoretical bandwidth of 7.88 GB/s, backward compatible with PCIe 3.0 system Performance Performance (2 TB Version) Sequential read/write up to 7 250/6 300 MB/s 4K random read/write with approximately 1000 k/1300 k IOPS PCMark 10 system disk bandwidth of 648 MB/s, average access of 23 μ s, lower latency for loading large games or 4K video editing hardware architecture Main controller: Samsung 5 nm "Piccolo" S4LY022, nickel plated heat dissipation top cover, power efficiency increased by 73% compared to 990 EVO Flash memory: Single 236 layer V-NAND TLC, 2 TB version only requires 1 package, reducing heat generation and cost No DRAM cache, using HMB (Host Memory Buffer) technology to borrow host memory as a mapping table Capacity and durability Market capacity: 1 TB/2 TB/4 TB TBW：600 TB（1 TB）、1 200 TB（2 TB）、2 400 TB（4 TB） 5-year warranty Heat dissipation and energy efficiency Copper heat dissipation label+nickel plated main control, high load maximum temperature of about 78 ° C, away from the speed limit threshold of 100 ° C The average power consumption has decreased by 16%, and the battery life of laptops/handheld devices/mini consoles is longer Usage scenarios Mainstream games, 4K content creation, high-speed system disk, AI cache disk Plug and play, suitable for desktop computers, laptops, and PS5 (requiring heat sinks)
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